mosfet metaloxidesemiconductorfieldeffecttransistor optimos?small-signal-transistor,100v BSL372SN datasheet rev.2.0 final industrial&multimarket
BSL372SN optimos ? small-signal-transistor features ? n-channel ? enhancement mode ? logic level (4.5v rated) ? avalanche rated ? qualified according to aec q101 ? rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified pg-tsop6 v ds 100 v r ds(on),max v gs =10 v 0.22 v gs =4.5 v 0.26 i d 2 a product summary type package tape and reel info marking halogen free packing BSL372SN tsop-6 h6327: 3000 pcs/ reel spx yes non dry 1 2 3 4 5 6 parameter symbol conditions unit continuous drain current i d t a =25 c 2.0 a t a =70 c 1.6 pulsed drain current i d,pulse t a =25 c 8.0 avalanche energy, single pulse e as i d =2 a, r gs =25 33 mj reverse diode d v /d t d v /d t i d =2 a, v ds =50 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v power dissipation 1) p tot t a =25 c w operating and storage temperature t j , t stg -55 ... 150 c esd class jesd22-a114 -hbm 0 (<250v) soldering temperature 260 c iec climatic category; din iec 68-1 55/150/56 value 2.0 rev 2.0 page 1 2014-10-16
BSL372SN parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance junction - soldering point r thjs - - 50 k/w thermal resistance r thja minimal footprint - - 230 junction - ambient 6 cm 2 cooling area 1) - - 62.5 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 100 - - v gate threshold voltage v gs(th) v ds =vgs v, i d =218 a 0.8 1.4 1.80 drain-source leakage current i dss v ds =100 v, v gs =0 v, t j =25 c - - 0.02 a v ds =100 v, v gs =0 v, - - 10 values rev 2.0 page 2 2014-10-16 t j =150 c -- 10 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 10 na gate-source on-state resistance r ds(on) v gs =10 v, i d =2 a - 151 220 m v gs =4.5 v, i d =1.85 a - 170 260 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =1.6 a 5.3 - s 1) device on 40mm x 40mm x 1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. (t < 5 sec.) rev 2.0 page 2 2014-10-16
BSL372SN parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 247 329 pf output capacitance c oss -4054 reverse transfer capacitance c rss -1928 turn-on delay time t d(on) - 3.5 5.2 ns rise time t r - 4.8 7.3 turn-off delay time t d(off) - 54.0 81.0 fall time t f - 22.1 33.2 gate char g e characteristics 2) gate to source charge q gs - 0.6 0.8 nc gate to drain charge q gd - 3.0 4.5 gate charge total q g - 9.5 14.3 gate plateau voltage v p lateau - 2.3 - v values v gs =0 v, v ds =25 v, f =1 mhz v dd =50 v, v gs =10 v, i d =2 a, r g,ext =6 v dd =50 v, i d =2 a, v gs =0 to 10 v rev 2.0 page 3 2014-10-16 pg plateau reverse diode diode continous forward current i s - - 2.0 a diode pulse current i s,pulse - - 8.0 diode forward voltage v sd v gs =0 v, i f =2 a, t j =25 c - 0.8 1.1 v reverse recovery time 2) t rr -4162ns reverse recovery charge 2) q rr -4771nc 2) defined by design. not subjected to production test v r =50 v, i f =2 a, d i f /d t =100 a/s t a =25 c rev 2.0 page 3 2014-10-16
BSL372SN 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); v gs 10 v 0 0.5 1 1.5 2 2.5 0 40 80 120 160 p tot [w] t a [ c] 0 0.5 1 1.5 2 2.5 0 40 80 120 160 i d [a] t a [ c] rev 2.0 page 4 2014-10-16 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c; d =0 z thja =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 z thja [k/w] t p [s] 0 0.5 1 1.5 2 2.5 0 40 80 120 160 p tot [w] t a [ c] 0 0.5 1 1.5 2 2.5 0 40 80 120 160 i d [a] t a [ c] 1 s 10 s 100 s 1 ms 10 ms 5 s 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 i d [a] v ds [v] rev 2.0 page 4 2014-10-16
BSL372SN 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 2.5 v 3 v 4 v 10 v 0 100 200 300 400 500 600 700 800 012345678 r ds(on) [m ] i d [a] 2 v 2.5 v 2.8 v 3 v 5 v 10 v 0 1 2 3 4 5 6 7 8 0246 i d [a] v ds [v] rev 2.0 page 5 2014-10-16 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c 0 1 2 3 4 5 6 7 8 9 10 11 012345678 g fs [s] i d [a] 25 c 150 c 0 1 2 3 4 5 6 7 8 01234 i d [a] v gs [v] 2.5 v 3 v 4 v 10 v 0 100 200 300 400 500 600 700 800 012345678 r ds(on) [m ] i d [a] 2 v 2.5 v 2.8 v 3 v 5 v 10 v 0 1 2 3 4 5 6 7 8 0246 i d [a] v ds [v] rev 2.0 page 5 2014-10-16
BSL372SN 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =2 a; v gs =10 v v gs(th) =f( t j ); v ds =v gs ; i d =218 a parameter: i d typ max 0 100 200 300 400 500 600 -60 -40 -20 0 20 40 60 80 100 120 140 160 r ds(on) [m ] t j [ c] 0 0.5 1 1.5 2 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 v gs(th) [v] t j [ c] typ max min rev 2.0 page 6 2014-10-16 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz; t j =25c i f =f( v sd ) parameter: t j typ max 0 100 200 300 400 500 600 -60 -40 -20 0 20 40 60 80 100 120 140 160 r ds(on) [m ] t j [ c] 0 0.5 1 1.5 2 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 v gs(th) [v] t j [ c] ciss coss crss 10 0 10 1 10 2 10 3 0 102030405060708090100 c [pf] v ds [v] 25 c 150 c 25 c, 98% 150 c, 98% 10 -2 10 -1 10 0 10 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 i f [a] v sd [v] typ max min rev 2.0 page 6 2014-10-16
BSL372SN 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 v gs =f( q gate ); i d =2 a pulsed parameter: t j(start) parameter: v dd 20 v 50 v 80 v 0 1 2 3 4 5 6 7 8 9 10 012345678910 v gs [v] q gate [nc] 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 i av [a] t av [s] rev 2.0 page 7 2014-10-16 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =250 a 80 84 88 92 96 100 104 108 112 116 120 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] 20 v 50 v 80 v 0 1 2 3 4 5 6 7 8 9 10 012345678910 v gs [v] q gate [nc] 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 i av [a] t av [s] v gs q gate v gs(th) q g(th) q gs q gd q sw q g rev 2.0 page 7 2014-10-16
BSL372SN tsop6 note: for s y mmetric t y pes there is no defined pin 1 orientation in the reel. r ev 2.0 page 8 2014-10-16
9 BSL372SN rev.2.0,2014-10-22 revisionhistory BSL372SN revision:2014-10-22,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2014-10-22 release of final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
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